Dózsa, László (1992) A new method to measure fast defect transients in semiconductor and/or insulator samples. SOLID-STATE ELECTRONICS, 35 (2). pp. 228-230. ISSN 0038-1101
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| Item Type: | Article |
|---|---|
| Subjects: | Q Science / természettudomány > QC Physics / fizika Q Science / természettudomány > QC Physics / fizika > QC06 Physics of condensed matter / szilárdtestfizika T Technology / alkalmazott, műszaki tudományok > TA Engineering (General). Civil engineering (General) / általános mérnöki tudományok T Technology / alkalmazott, műszaki tudományok > TK Electrical engineering. Electronics Nuclear engineering / elektrotechnika, elektronika, atomtechnika |
| SWORD Depositor: | MTMT SWORD |
| Depositing User: | MTMT SWORD |
| Date Deposited: | 13 Nov 2013 11:14 |
| Last Modified: | 13 Nov 2013 11:14 |
| URI: | http://real.mtak.hu/id/eprint/7277 |
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