Alshahed, M. and Heuken, L. and Alomari, M. and Cora, Ildikó and Tóth, Lajos and Pécz, Béla (2018) Low-Dispersion, High-voltage, Low-Leakage GaN HEMTs on Native GaN Substrates. IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (7). pp. 2939-2947. ISSN 0018-9383
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Low_T_ED_V3_Alshahed_shortened_u.pdf - Draft Version Download (3MB) | Preview |
Official URL: https://doi.org/10.1109/TED.2018.2832250
| Item Type: | Article |
|---|---|
| Subjects: | Q Science / természettudomány > QC Physics / fizika Q Science / természettudomány > QC Physics / fizika > QC04 Electricity. Magnetism. Electromagnetism / villamosság, mágnesesség, elektromágnessesség |
| SWORD Depositor: | MTMT SWORD |
| Depositing User: | MTMT SWORD |
| Date Deposited: | 03 Aug 2018 11:24 |
| Last Modified: | 03 Aug 2018 11:24 |
| URI: | http://real.mtak.hu/id/eprint/82507 |
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