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Items where Author is "Gregušová, Dagmar"
Group by: Item Type | No Grouping Jump to: Article Number of items: 4. ArticlePohorelec, Ondrej and Ťapajna, Milan and Gregušová, Dagmar and Gucmann, Filip and Hasenöhrl, Stanislav and Pécz, Béla and Tóth, Lajos (2020) Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs. APPLIED SURFACE SCIENCE, 528. ISSN 0169-4332 Gregušová, Dagmar and Tóth, Lajos and Pohorelec, Ondrej and Hasenöhrl, Stanislav and Haščík, Štefan and Cora, Ildikó and Fogarassy, Zsolt and Pécz, Béla (2019) InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region. JAPANESE JOURNAL OF APPLIED PHYSICS, 58. pp. 1-6. ISSN 0021-4922 (print); 1347-4065 (online) Ťapajna, Milan and Stoklas, R. and Gregušová, Dagmar and Gucmann, Filip and Hušeková, K. and Tóth, Lajos and Pécz, Béla (2017) Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties. APPLIED SURFACE SCIENCE, 426. pp. 656-661. ISSN 0169-4332 Ťapajna, Milan and Válik, Lukáš and Gucmann, Filip and Gregušová, Dagmar and Fröhlich, Karol and Tóth, Lajos and Pécz, Béla (2017) Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/ GaN MOS HEMTs: Impact of deposition conditions on interface state density. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35 (1). in press. ISSN 1071-1023 |
