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Items where Author is "Gucmann, Filip"
Group by: Item Type | No Grouping Number of items: 4. Chouhan, Hemendra and Dobročka, Edmund and Nádaždy, Peter and Ťapajna, Milan and Hušeková, Kristína and Cora, Ildikó and Rosová, Alica and Mikolášek, Miroslav and Egyenes, Fridrich and Keshtkar, Javad and Hrubišák, Fedor and Sobota, Michal and Šiffalovič, Peter and Gregušová, Dagmar and Pohorelec, Ondrej and Wosko, Mateusz and Paszkiewicz, Regina and Gucmann, Filip (2025) Rotational domains and origin of improved crystal quality in heteroepitaxial ( 2 ̅ 01 ) β-Ga2O3 films grown on vicinal substrates by MOCVD. JOURNAL OF ALLOYS AND COMPOUNDS, 1044. No. 184481. ISSN 0925-8388 Pohorelec, Ondrej and Ťapajna, Milan and Gregušová, Dagmar and Gucmann, Filip and Hasenöhrl, Stanislav and Pécz, Béla and Tóth, Lajos (2020) Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs. APPLIED SURFACE SCIENCE, 528. ISSN 0169-4332 Ťapajna, Milan and Stoklas, R. and Gregušová, Dagmar and Gucmann, Filip and Hušeková, K. and Tóth, Lajos and Pécz, Béla (2017) Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties. APPLIED SURFACE SCIENCE, 426. pp. 656-661. ISSN 0169-4332 Ťapajna, Milan and Válik, Lukáš and Gucmann, Filip and Gregušová, Dagmar and Fröhlich, Karol and Tóth, Lajos and Pécz, Béla (2017) Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/ GaN MOS HEMTs: Impact of deposition conditions on interface state density. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35 (1). in press. ISSN 1071-1023 |
