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Items where Author is "Haščík, Štefan"
Group by: Item Type | No Grouping Jump to: Article Number of items: 1. ArticleGregušová, Dagmar and Tóth, Lajos and Pohorelec, Ondrej and Hasenöhrl, Stanislav and Haščík, Štefan and Cora, Ildikó and Fogarassy, Zsolt and Pécz, Béla (2019) InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region. JAPANESE JOURNAL OF APPLIED PHYSICS, 58. pp. 1-6. ISSN 0021-4922 (print); 1347-4065 (online) |
