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Items where Author is "Hasenöhrl, Stanislav"
Group by: Item Type | No Grouping Number of items: 2. Pohorelec, Ondrej and Ťapajna, Milan and Gregušová, Dagmar and Gucmann, Filip and Hasenöhrl, Stanislav and Pécz, Béla and Tóth, Lajos (2020) Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs. APPLIED SURFACE SCIENCE, 528. ISSN 0169-4332 Gregušová, Dagmar and Tóth, Lajos and Pohorelec, Ondrej and Hasenöhrl, Stanislav and Haščík, Štefan and Cora, Ildikó and Fogarassy, Zsolt and Pécz, Béla (2019) InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region. JAPANESE JOURNAL OF APPLIED PHYSICS, 58. pp. 1-6. ISSN 0021-4922 (print); 1347-4065 (online) |
