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Items where Author is "Pohorelec, Ondrej"
Group by: Item Type | No Grouping Jump to: Article Number of items: 3. ArticleChouhan, Hemendra and Dobročka, Edmund and Nádaždy, Peter and Ťapajna, Milan and Hušeková, Kristína and Cora, Ildikó and Rosová, Alica and Mikolášek, Miroslav and Egyenes, Fridrich and Keshtkar, Javad and Hrubišák, Fedor and Sobota, Michal and Šiffalovič, Peter and Gregušová, Dagmar and Pohorelec, Ondrej and Wosko, Mateusz and Paszkiewicz, Regina and Gucmann, Filip (2025) Rotational domains and origin of improved crystal quality in heteroepitaxial ( 2 ̅ 01 ) β-Ga2O3 films grown on vicinal substrates by MOCVD. JOURNAL OF ALLOYS AND COMPOUNDS, 1044. No. 184481. ISSN 0925-8388 Pohorelec, Ondrej and Ťapajna, Milan and Gregušová, Dagmar and Gucmann, Filip and Hasenöhrl, Stanislav and Pécz, Béla and Tóth, Lajos (2020) Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs. APPLIED SURFACE SCIENCE, 528. ISSN 0169-4332 Gregušová, Dagmar and Tóth, Lajos and Pohorelec, Ondrej and Hasenöhrl, Stanislav and Haščík, Štefan and Cora, Ildikó and Fogarassy, Zsolt and Pécz, Béla (2019) InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region. JAPANESE JOURNAL OF APPLIED PHYSICS, 58. pp. 1-6. ISSN 0021-4922 (print); 1347-4065 (online) |
