Structure and optical properties of Ca silicide films and Si/Ca3Si4/Si(111) heterostructures

Galkin, Nikolay Gennadievich and Bezbabnyi, Dmitri Aleksandrovich and Dotsenko, Sergei Andreevich and Chernev, Igor Mikhailovich and Nemes Incze, Péter and Dózsa, László and Pécz, Béla (2014) Structure and optical properties of Ca silicide films and Si/Ca3Si4/Si(111) heterostructures. SOLID STATE PHENOMENA, 213. pp. 71-79. ISSN 1012-0394

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Abstract

Thick, thin films and island of Ca silicide have been grown by Ca deposition onto 500 oC Si(111)7x7 substrates. The crystal structure of the grown layers strongly differs from the known Ca silicides (Ca2Si, CaSi, Ca5Si3, Ca14Si19, CaSi2). The phonon peaks at 389 and 416 cm-1 and the interband transition peaks (0.9-1.0, 1.3-1.7 and 2.0-2.5 eV) belong to another silicide – Ca3Si4. Peculiarities of crystal, electronic, and phonon structure and optical properties of the grown Ca silicide films were measured by in situ and ex situ methods permit to state that the formed Ca silicide film has a composition Ca3Si4. Heterostructures with embedded Ca3Si4 films with different thicknesses have been formed atop the Ca3Si4 films by MBE and SPE at 500 oC. The observed density of pinholes with different sizes suggests the Si growth atop the Ca silicide follows a 3D mechanism. Photoluminescence was found for the first time in Si/Ca3Si4/Si(111) heterostructures.

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