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Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride

Fodor, Bálint and Cayrel, F. and Agócs, Emil and Alquier, D. and Fried, Miklós and Petrik, Péter (2014) Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride. THIN SOLID FILMS, 571. pp. 567-572. ISSN 0040-6090

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Abstract

Single-crystalline silicon wafers covered with sacrificial oxide layer and epitaxially grown gallium nitride layers were implanted with high-fluence helium ions (2-6 × 1016 cm- 2) at energies of 20-30 keV. Thermal annealings at 650-1000 °C, 1 h were performed on the Si samples and rapid thermal annealings at 600-1000 °C, 120 s under N2 were performed on the GaN samples. The as-implanted samples and the near-surface cavity distributions of the annealed samples were investigated with variable angle spectroscopic ellipsometry. In-depth defect profiles and cavity profiles can be best described with multiple independent effective medium sublayers of varying ratio of single-crystal/void. The number of sublayers was chosen to maximize the fit quality without a high parameter cross-correlation. The dependence of the implantation fluence, oxide layer thickness and annealing temperature on the cavity distribution was separately investigated. The ellipsometric fitted distributions were compared and cross-checked with analyses of transmission electron micrographs where the average surface cavity was determined sublayer by sublayer. The in-depth profiles were also compared with simulations of He and vacancy distributions.

Item Type: Article
Uncontrolled Keywords: spectroscopic ellipsometry; Ion-implantation; Depth profile; CAVITY; annealing
Subjects: Q Science / természettudomány > QC Physics / fizika
T Technology / alkalmazott, műszaki tudományok > T2 Technology (General) / műszaki tudományok általában
SWORD Depositor: MTMT SWORD
Depositing User: MTMT SWORD
Date Deposited: 15 Jul 2014 08:16
Last Modified: 18 May 2016 10:56
URI: http://real.mtak.hu/id/eprint/13728

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