Hajnal, Zoltán and Miró, József and Kiss, Gábor and Réti, Ferenc and Deák, Péter and Herndon, Roy C. and Kuperberg, J. Michael (1999) Role of oxygen vacancy defect states in the n-type conduction of β-Ga[sub 2]O[sub 3]. Journal of Applied Physics, 86 (7). pp. 3792-3796. ISSN 0021-8979 (print), 1089-7550 (online)
|
Text
1122779.pdf Download (139kB) | Preview |
Abstract
Based on semiempirical quantum-chemical calculations, the electronic band structure of β-Ga2O3 is presented and the formation and properties of oxygen vacancies are analyzed. The equilibrium geometries and formation energies of neutral and doubly ionized vacancies were calculated. Using the calculated donor level positions of the vacancies, the high temperature n-type conduction is explained. The vacancy concentration is obtained by fitting to the experimental resistivity and electron mobility.
| Item Type: | Article |
|---|---|
| Subjects: | Q Science / természettudomány > QC Physics / fizika T Technology / alkalmazott, műszaki tudományok > T2 Technology (General) / műszaki tudományok általában |
| Depositing User: | Erika Bilicsi |
| Date Deposited: | 10 Apr 2013 14:08 |
| Last Modified: | 10 Apr 2013 14:08 |
| URI: | http://real.mtak.hu/id/eprint/4730 |
Actions (login required)
 |
Edit Item |
