Structural characterization of 3C-SiC grown using methyltrichlorosilane

Bosi, Matteo and Attolini, Giovanni and Pécz, Béla and Zolnai, Zsolt and Dobos, László and Martínez, Oscar and Jiang, Liudi and Taysir, Salim (2013) Structural characterization of 3C-SiC grown using methyltrichlorosilane. Materials Science Forum, 740-74. pp. 291-294. ISSN 0255-5476

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3C-SiC layers were grown on Si substrates using standard precursors (SiH4 and C3H8) and by adding methyl trichloro silane (MTS) to the gas phase, with growth temperatures between 1200 and 1300 °C. Characterization of the 3C-SiC layers shows that 3C-SiC grown with MTS has higher polycrystalline and amorphous content as well as lower residual stress.

Item Type: Article
Uncontrolled Keywords: SiC, Methyl trichloro silane, stress, polycrystal, defects
Subjects: T Technology / alkalmazott, műszaki tudományok > T2 Technology (General) / műszaki tudományok általában
Depositing User: Andrea Bolgár
Date Deposited: 22 Apr 2013 14:54
Last Modified: 22 Apr 2013 14:54

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