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Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions

Pető, János and Ollár, Tamás and Vancsó, Péter and Popov, Z. I. and Magda, Gábor Zsolt and Dobrik, Gergely and Tapasztó, Levente (2018) Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions. NATURE CHEMISTRY (10). pp. 1246-1251. ISSN 1755-4330

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Additional Information: Hungarian Academy of Sciences, Centre for Energy Research, Institute of Technical Physics and Materials Science, 2DNanoelectronics Lendület Research Group, Budapest, Hungary \n Hungarian Academy of Sciences, Centre for Energy Research, Institute for Energy Security and Environmental Safety, Surface Chemistry and Catalysis Department, Budapest, Hungary \n Department of Physics, University of Namur, Namur, Belgium \n National University of Science and Technology MISiS, Moscow, Russian Federation \n Korea Research Institute for Standards and Science, Daejeon, South Korea \n Export Date: 28 November 2018 \n Article in Press \n CODEN: NCAHB \n Correspondence Address: Tapasztó, L.; Hungarian Academy of Sciences, Centre for Energy Research, Institute of Technical Physics and Materials Science, 2DNanoelectronics Lendület Research GroupHungary; email: tapaszto@mfa.kfki.hu
Subjects: Q Science / természettudomány > QD Chemistry / kémia
SWORD Depositor: MTMT SWORD
Depositing User: MTMT SWORD
Date Deposited: 28 Nov 2018 14:23
Last Modified: 28 Nov 2018 14:23
URI: http://real.mtak.hu/id/eprint/88048

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