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Large Voltage-Tunable Spin Valve Based on a Double Quantum Dot

Tulewicz, P. and Wrześniewski, K. and Csonka, Szabolcs and Weymann, I. (2021) Large Voltage-Tunable Spin Valve Based on a Double Quantum Dot. PHYSICAL REVIEW APPLIED, 16 (1). ISSN 2331-7019

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Abstract

We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The current flowing through the system is determined within perturbation theory in the hopping between the dots, whereas the spectrum of a quantum-dot-ferromagnetic-lead subsystem is determined by means of the numerical renormalization group method. The spin-dependent charge fluctuations between ferromagnets and quantum dots generate an effective exchange field, which splits the double-dot levels. Such a field can be controlled, separately for each quantum dot, by the gate voltages or by changing the magnetic configuration of the external leads. We demonstrate that the considered double-quantum-dot spin-valve setup exhibits enhanced magnetoresistive properties, including both normal and inverse tunnel magnetoresistance. We also show that this system allows for the generation of highly spin-polarized currents, which can be controlled by purely electrical means. The considered double quantum dot with ferromagnetic contacts can thus serve as an efficient voltage-tunable spin valve characterized by high output parameters. © 2021 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Item Type: Article
Uncontrolled Keywords: Numerical methods; nanocrystals; Quantum chemistry; Semiconductor quantum dots; Perturbation techniques; Statistical mechanics; FERROMAGNETISM; Ferromagnetic materials; spin fluctuations; Magnetic devices; Magnetic configuration; Spin polarized currents; Ferromagnetic contacts; Tunnelling magnetoresistance; Numerical renormalization group methods; Ferromagnetic leads; Inverse tunnel magnetoresistance; Magnetoresistive property; Spin-dependent transport properties;
Subjects: Q Science / természettudomány > QC Physics / fizika
SWORD Depositor: MTMT SWORD
Depositing User: MTMT SWORD
Date Deposited: 19 Jan 2023 15:25
Last Modified: 19 Jan 2023 15:25
URI: http://real.mtak.hu/id/eprint/156888

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