Electrical properties of polysilicon n(+)-i-p junctions

Dimitriadis, C. A. and Papadimitriou, L. and Dózsa, László and Coxon, P. A. (1988) Electrical properties of polysilicon n(+)-i-p junctions. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 3 (6). pp. 558-563. ISSN 0268-1242

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Abstract

The current-voltage (I-V) characteristics, the frequency and temperature dependence of the capacitance and deep-level transient spectroscopy measurements in n+-i-p polysilicon junctions are investigated. All the polysilicon junctions underwent the same fabrication process except for the ion-implantation step. From the analysis of the experimental results information about the structure and defects of the undoped polysilicon material are obtained. At a low injection level of electrons the diode current is controlled by the distribution in energy grain boundary states and the structure of the deep centres change, after application of high (10 mA) injection level of electrons, to the single trap 0.182 eV.

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