Thickness dependent structure of beta-FeSi2 grown on silicon by solid phase epitaxy

Vouroutzis, N. and Zorba, T. T. and Dimitriadis, C. A. and Paraskevopoulos, K. M. and Dózsa, László and Molnár, György (2005) Thickness dependent structure of beta-FeSi2 grown on silicon by solid phase epitaxy. JOURNAL OF ALLOYS AND COMPOUNDS, 393 (1-2). pp. 167-170. ISSN 0925-8388

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Abstract

Semiconducting beta-FeSi2 was grown on Si(0 0 1) substrates by depositing Fe layers of thickness 2, 4 and 6 nm at room temperature in an ultra-high vacuum system and subsequent in situ annealing at 600 degrees C for 15 min. The phase of the grown polycrystalline beta-FeSi2 was confirmed by electron diffraction and infrared reflectance measurements. Transmission electron microscopy analysis has shown that the structure of the formed beta-FeSi2 is thickness dependent. For an Fe layer of thickness 2 nm, beta-FeSi2 nanodots with a mean diameter of about 15 nm were grown, together with islands of irregular shape and linear or S-type arrays of beta-FeSi2 nanodots. For thicker Fe layers, the grown beta-FeSi2 consisted of continuous polycrystalline layers.

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