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Items where Author is "Deák, Peter"
Group by: Item Type | No Grouping Jump to: Article Number of items: 5. ArticleKnaup, J. M. and Deák, Peter and Gali, Ádám and Hajnal, Zoltán and Frauenheim, Thomas and Choyke, W. J. (2005) The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO2 Defects. Materials Science Forum, 483-85. pp. 569-572. ISSN 0255-5476 Knaup, Jan and Deák, Peter and Frauenheim, Thomas and Gali, Ádám and Hajnal, Zoltán and Choyke, W. (2005) Theoretical study of the mechanism of dry oxidation of 4H-SiC. Physical Review B (Condensed Matter and Materials Physics), 71 (23). No. 235321. ISSN 1098-0121 Szűcs, Bernadett and Gali, Ádám and Hajnal, Zoltán and Deák, Peter and Van de Walle, Chris (2003) Physics and chemistry of hydrogen in the vacancies of semiconductors. Physical Review B (Condensed Matter and Materials Physics), 68 (8). No. 085202. ISSN 1098-0121 Rauls, E. and Hajnal, Zoltán and Gali, Ádám and Deák, Peter and Frauenheim, Thomas (2001) Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs. Materials Science Forum, 353-56. pp. 435-438. ISSN 1662-9752 Rauls, E. and Hajnal, Zoltán and Deák, Peter and Frauenheim, Thomas (2000) (1010)– and (1120)–Surfaces in 2H–, 4H– and 6H–SiC. Materials Science Forum, 338-42. pp. 365-368. ISSN 1662-9752 |
