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Electrically and mechanically tunable electron spins in silicon carbide color centers

Falk, A. L. and Klimov, P. V. and Buckley, B. B. and Ivády, Viktor and Abrikosov, I. A. and Calusine, G. and Koehl, W. F. and Gali, Ádám and Awschalom, D. D. (2014) Electrically and mechanically tunable electron spins in silicon carbide color centers. PHYSICAL REVIEW LETTERS, 112 (18). ISSN 0031-9007

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Abstract

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10-6 strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15-36%. These results establish SiC color centers as compelling systems for sensing nanoscale fields.

Item Type: Article
Subjects: Q Science / természettudomány > QC Physics / fizika
SWORD Depositor: MTMT SWORD
Depositing User: MTMT SWORD
Date Deposited: 13 Feb 2024 14:04
Last Modified: 13 Feb 2024 14:04
URI: https://real.mtak.hu/id/eprint/188310

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