Investigation of MBE grown inverted GaAs quantum dots

Nemcsics, Ákos and Pődör, Bálint and Tóth, Lajos and Balázs, János and Dobos, László and Makai, János and Ürmös, Antal (2016) Investigation of MBE grown inverted GaAs quantum dots. MICROELECTRONICS RELIABILITY, 59. pp. 60-63. ISSN 0026-2714

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Abstract

In this work, we investigate the formation of the inverted technology created quantum dot by a method based on droplet epitaxy.The preparation process of the socalled invertedquantum dot is carriedout with the fi lling of the nano-hole. The investigated GaAs dot is embedded in AlAs/Al x Ga 1 − x As multilayer structure. Transmission electron microscopy investigation shows that the quantum structure is perfectly crystalline and fi ts very well to the crystal structure of the base layer. The nano-hole has a hill around its opening. Furthermore, the sides of the nano-structure consist of low Miller index facets. The fi lling process results formation of a hill over the nano-hole. The elemental mapping shows Al immigration into the GaAs layer. Formation of the hill after the fi ll- ing process and the Al immigration are also explained in this paper. Temperature dependent photoluminescence spectra were measured in the range of room temperature and 4.7 K. The electronic structure given from photoluminescence spectroscopy is explained.

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