Interstitial-based vacancy annealing in 4H–SiC

Rauls, E. and Staab, T. E. M. and Hajnal, Zoltán and Frauenheim, Th. (2001) Interstitial-based vacancy annealing in 4H–SiC. Physica B: Condensed Matter, 308-10. pp. 645-648. ISSN 0921-4526

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Abstract

The migration of carbon interstitials through the 4H–SiC lattice and their recombination with vacancies has been investigated theoretically within the self-consistent charge density functional based tight-binding (SCC-DFTB) method. For vacancy–interstitial pairs created by irradiation, the capture radius of silicon and carbon vacancies has been examined, showing that interstitial migration through the otherwise perfect lattice starts getting important for distances larger than four nearest-neighbor atomic distances.

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