Baji, Zsófia and Lábadi, Zoltán and Molnár, György and Pécz, Béla and Tóth, Attila Lajos and Tóth, József and Csik, Attila and Bársony, István (2013) Post-selenization of stacked precursor layers for CIGS. Vacuum, 92. pp. 44-51. ISSN 0042-207X
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Abstract
In this study the possibility of the fabrication of CIGS layers from stacked precursors with selenization is examined. Different sequences of precursor layers and two different selenization methods were applied, in order to establish the optimal order of Cu, In and Ga layers in the precursor layer stack. The obtained CIGS films were studied by different micro- and surface analysis methods (TEM, SEM, EDS, XRD, SNMS, XPS). Since the evaporation of a Se layer and post-annealing does not result in a homogeneous CIGS layer, the appropriate selenization must be accomplished in Se-vapour.
Item Type: | Article |
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Uncontrolled Keywords: | CIGS; Selenization; Stacked precursors; Precursor morphology |
Subjects: | T Technology / alkalmazott, műszaki tudományok > T2 Technology (General) / műszaki tudományok általában |
Depositing User: | Andrea Bolgár |
Date Deposited: | 02 May 2013 07:57 |
Last Modified: | 12 May 2016 11:50 |
URI: | http://real.mtak.hu/id/eprint/4968 |
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