Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts

Roccaforte, Fabrizio and Vivona, Marilena and Ethan Panasci, Salvatore and di Franco, Salvatore and Greco, Giuseppe and Fiorenza, Patrick and Sulyok, Attila and Koós, Antal Adolf and Pécz, Béla and Giannazzo, Filippo (2025) Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts. MATERIALS SCIENCE FORUM, 1159. pp. 1-7. ISSN 0255-5476

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Abstract

This paper reports on the effect of a sulfurization thermal process of the silicon carbide surface on the properties of Ni4H-SiC Schottky barrier. In particular, the incorporation of sulfur (S) in the 4H-SiC near-surface region was observed at the process performed at 800 °C, without any significant effect on the surface morphology. On the other hand, Ni4H-SiC Schottky contacts fabricated on the sulfurized 4H-SiC surface showed a 0.3 eV reduction of the average barrier height with a narrower distribution, with respect to the untreated sample. These results were explained by an increase of the 4H-SiC electron affinity after sulfurization, and a Fermi level pinning effect.

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