Formation of Zinc Oxide Buried Layers within the Walls of the Aero-GaN Microtubes : Chapter 12

Braniste, Tudor and Fogarassy, Zsolt and Kovács, András and Pécz, Béla and Tiginyanu, Ion (2025) Formation of Zinc Oxide Buried Layers within the Walls of the Aero-GaN Microtubes : Chapter 12. In: 7th International Conference on Nanotechnologies and Biomedical Engineering. IFMBE Proceedings (134). Springer Nature Switzerland, Cham, pp. 104-111. ISBN 9783032064943; 9783032064936

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Abstract

This work reports on the formation of zinc oxide (ZnO) layers encapsulated within the walls of the aerogalnite (aero-GaN) microtubes. The buried layers of ZnO form during the growth process of gallium nitride on a sacrificial template based on interconnected ZnO microtetrapods. The GaN growth occurs in a hydride vapor phase epitaxy system at two distinct temperatures. In the first step, at 600 °C, the nucleation and growth of the GaN layer is initiated, while at 850 °C, the GaN growth is accompanied by simultaneous decomposition of ZnO and its redeposition on the surface of neighbouring microtetrapods. Due to high temperature and corrosive environment, the sacrificial ZnO substrate is removed in less than 10 min. Nevertheless, an ultrathin layer of ZnO remains at the interface with GaN, on the inner side of the hollow microtubes. Since the aerogalnite technological process continues after the removal of ZnO template, this ultrathin layer of ZnO became completely buried in the GaN wall. The formation of the ZnO buried layers in aerogalnite, demonstrated using the transmission electron microscopy techniques, opens new avenues for exploring ZnO/GaN interface with negligible mismatch between two lattices.

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