Comparison of CO 2 laser-Pumped GaAs, ZnTe, and GaP Terahertz Pulse Sources

Gabit, Nazymbekov and Illés, Gergő and Hebling, János and Tóth, György (2025) Comparison of CO 2 laser-Pumped GaAs, ZnTe, and GaP Terahertz Pulse Sources. In: 2025 50th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, Piscataway (NJ), 10.1109/IRMMW-THz61557.2025.11319802. ISBN 9798350378832

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Abstract

High-power terahertz pulses can be generated efficiently in semiconductors by utilising optical rectification. However, the application of short-wavelength pump pulses produces low-order multiphoton absorption. For this reason, the possibility of the application of CO₂ lasers for pumping semiconductor materials, gallium arsenide (GaAs), zinc telluride (ZnTe), and gallium phosphide (GaP) terahertz sources is represented in this study. The numerical calculations over the 1D+1 model were used to investigate the conversion efficiency, pulse shapes, and spectral characteristics of both the generated THz pulse and pump pulse. The model takes into account the following nonlinear effects: optical rectification, second harmonic generation, and self-phase modulation. The results show that GaAs provides higher electric field strength and better quality of generated THz pulse than ZnTe and GaP. The ultrashort CO₂ laser-driven semiconductor crystals exhibit considerable promise for generating terahertz pulses characterised by exceptionally high pulse energy and field strength, which are essential for the practical use of terahertz particle acceleration.

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