Items where Author is "Rauls, E."
Group by: Item Type | No Grouping Jump to: Article Number of items: 5. ArticleRauls, E. and Staab, T. E. M. and Hajnal, Zoltán and Frauenheim, Th. (2001) Interstitial-based vacancy annealing in 4H–SiC. Physica B: Condensed Matter, 308-10. pp. 645-648. ISSN 0921-4526 Rauls, E. and Hajnal, Zoltán and Gali, Ádám and Deák, Peter and Frauenheim, Thomas (2001) Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs. Materials Science Forum, 353-56. pp. 435-438. ISSN 1662-9752 Lingner, Th. and Greulich-Weber, S. and Spaeth, J. M. and Gerstmann, U. and Rauls, E. and Hajnal, Zoltán and Frauenheim, Th. and Overhof, H. (2001) Structure of the silicon vacancy in 6H-SiC after annealing identified as the carbon vacancy–carbon antisite pair. Physical Review B (Condensed Matter and Materials Physics), 64 (24). No. 245212. ISSN 1098-0121 Rauls, E. and Hajnal, Zoltán and Deák, P. and Frauenheim, Th. (2001) Theoretical study of the nonpolar surfaces and their oxygen passivation in 4H- and 6H-SiC. Physical Review B (Condensed Matter and Materials Physics), 64 (24). No. 245323. ISSN 1098-0121 Rauls, E. and Hajnal, Zoltán and Deák, Peter and Frauenheim, Thomas (2000) (1010)– and (1120)–Surfaces in 2H–, 4H– and 6H–SiC. Materials Science Forum, 338-42. pp. 365-368. ISSN 1662-9752 |