Gubicza, Jenő and Ungár, Tamás (2007) Characterization of defect structures in nanocrystalline materials by X-ray line profile analysis. Zeitschrift für Kristallographie, 222 (11). pp. 567-579. ISSN 0044-2968
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Abstract
X-ray line profile analysis is a powerful alternative tool for determining dislocation densities, dislocation type, crystallite and subgrain size and size-distributions, and planar defects, especially the frequency of twin boundaries and stacking faults. The method is especially useful in the case of submicron grain size or nanocrystalline materials, where X-ray line broadening is a well pronounced effect, and the observation of defects with very large density is often not easy by transmission electron microscopy. The fundamentals of X-ray line broadening are summarized in terms of the different qualitative breadth methods, and the more sophisticated and more quantitative whole pattern fitting procedures. The efficiency and practical use of X-ray line profile analysis is shown by discussing its applications to metallic, ceramic, diamond-like and polymer nanomaterials.
Item Type: | Article |
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Subjects: | Q Science / természettudomány > QC Physics / fizika Q Science / természettudomány > QC Physics / fizika > QC06 Physics of condensed matter / szilárdtestfizika |
Depositing User: | Erika Bilicsi |
Date Deposited: | 03 Apr 2013 07:48 |
Last Modified: | 03 Apr 2013 07:48 |
URI: | http://real.mtak.hu/id/eprint/4550 |
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