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Items where Author is "Gali, Ádám"

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Number of items: 11.

Article

Beke, Dávid and Szekrényes, Zsolt and Balogh, István and Czigány, Zsolt and Kamarás, Katalin and Gali, Ádám (2013) Preparation of small silicon carbide quantum dots by wet chemical etching. JOURNAL OF MATERIALS RESEARCH, 28 (1). pp. 44-49. ISSN 0884-2914

Beke, Dávid and Szekrényes, Zsolt and Pálfi, Denés and Róna, Gergely and Balogh, István and Czigány, Zsolt and Kamarás, Katalin and Buday, László and Vértessy, Beáta and Gali, Ádám (2013) Silicon carbide quantum dots for bioimaging. JOURNAL OF MATERIALS RESEARCH, 28 (2). pp. 205-209. ISSN 0884-2914

Knaup, J. and Deák, P. and Frauenheim, Th. and Gali, Ádám and Hajnal, Zoltán and Choyke, W. (2005) Defects in SiO2 as the possible origin of near interface traps in the SiC∕SiO2 system: A systematic theoretical study. Physical Review B (Condensed Matter and Materials Physics), 72 (11). No. 115323. ISSN 1098-0121

Knaup, J. M. and Deák, Peter and Gali, Ádám and Hajnal, Zoltán and Frauenheim, Thomas and Choyke, W. J. (2005) The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO2 Defects. Materials Science Forum, 483-85. pp. 569-572. ISSN 0255-5476

Knaup, Jan and Deák, Peter and Frauenheim, Thomas and Gali, Ádám and Hajnal, Zoltán and Choyke, W. (2005) Theoretical study of the mechanism of dry oxidation of 4H-SiC. Physical Review B (Condensed Matter and Materials Physics), 71 (23). No. 235321. ISSN 1098-0121

Deák, P. and Gali, Ádám and Knaup, J. and Hajnal, Zoltán and Frauenheim, Th. and Ordejón, P. and Choyke, J.W. (2003) Defects of the SiC/SiO2 interface: energetics of the elementary steps of the oxidation reaction. Physica B: Condensed Matter, 340-42. pp. 1069-1073. ISSN 0921-4526

Szűcs, Bernadett and Gali, Ádám and Hajnal, Zoltán and Deák, Peter and Van de Walle, Chris (2003) Physics and chemistry of hydrogen in the vacancies of semiconductors. Physical Review B (Condensed Matter and Materials Physics), 68 (8). No. 085202. ISSN 1098-0121

Gali, Ádám and Heringer, D. and Deák, P. and Hajnal, Zoltán and Frauenheim, Th. and Devaty, R. and Choyke, W. (2002) Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study. Physical Review B (Condensed Matter and Materials Physics), 66 (12). No. 125208. ISSN 1098-0121

Rauls, E. and Hajnal, Zoltán and Gali, Ádám and Deák, Peter and Frauenheim, Thomas (2001) Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs. Materials Science Forum, 353-56. pp. 435-438. ISSN 1662-9752

Monograph

Gali, Ádám (2011) Ponthibák vizsgálata széles tiltott sávú anyagokban a standard sűrűségfunkcionál elméleteken túli módszerekkel = Investigation of point defects in wide band gap materials by methods beyond the standard density functional theory. Project Report. OTKA.

Gali, Ádám and Aradi, Bálint (2007) Besugárzással létrehozott ponthiba és ponthibaagglomerátumok, valamint ezek optikai tulajdonságokra gyakorolt hatásának elméleti vizsgálata szilíciumkarbidban = Theoretical investigation of point defects, their agglomerates and their effects on optical properties in irradiated silicon carbide by means of quantum mechanical calculations. Project Report. OTKA.

This list was generated on Thu Nov 20 21:53:07 2014 CET.