Items where Author is "Gali, Ádám"

Article

Kollarics, Sándor and Márkus, Bence Gábor and Kucsera, Robin and Thiering, Gergő and Gali, Ádám and Németh, Gergely and Kamarás, Katalin and Forró, László and Simon, Ferenc (2024) Terahertz emission from diamond nitrogen-vacancy centers. SCIENCE ADVANCES, 10 (22). No. eadn0616. ISSN 2375-2548

Czene, Szabolcs and Jegenyés, Nikoletta and Krafcsik, Olga and Lenk, Sándor and Czigány, Zsolt and Bortel, Gábor and Kamarás, Katalin and Rohonczy, János and Beke, Dávid and Gali, Ádám (2023) Amino-Termination of Silicon Carbide Nanoparticles. NANOMATERIALS, 13 (13). ArtNo:1953. ISSN 2079-4991

Ghafari Cherati, Nima and Thiering, Gergő and Gali, Ádám (2023) Investigation of oxygen-vacancy complexes in diamond by means of ab initio calculations. JOURNAL OF PHYSICS-CONDENSED MATTER, 35 (31). No-315502. ISSN 0953-8984

Mukherjee, Sounak and Zhang, Zi-Huai and Oblinsky, Daniel G. and de Vries, Mitchell O. and Johnson, Brett C. and Gali, Ádám and Thiering, Gergő (2023) A Telecom O-Band Emitter in Diamond. NANO LETTERS, 23 (7). pp. 2557-2562. ISSN 1530-6984

Cambria, M.C. and Norambuena, A. and Dinani, H.T. and Thiering, Gergő and Gardill, A. and Kemény, I. and Li, Y. and Lordi, V. and Gali, Ádám and Maze, J.R. and Kolkowitz, S. (2023) Temperature-Dependent Spin-Lattice Relaxation of the Nitrogen-Vacancy Spin Triplet in Diamond. PHYSICAL REVIEW LETTERS, 130 (25). No-256903. ISSN 0031-9007

Deák, Péter and Udvarhelyi, Péter and Thiering, Gergő and Gali, Ádám (2023) The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium. NATURE COMMUNICATIONS, 14 (1). No-361. ISSN 2041-1723

Rudolf, Mátyás and Bortel, Gábor and Márkus, Bence Gábor and Jegenyés, Nikoletta and Verkhovlyuk, Vladimir and Kamarás, Katalin and Simon, Ferenc and Gali, Ádám and Beke, Dávid (2022) Optimization of Chromium-Doped Zinc Gallate Nanocrystals for Strong Near-Infrared Emission by Annealing. ACS APPLIED NANO MATERIALS, 5 (7). pp. 8950-8961. ISSN 2574-0970

Kolarics, Sándor and Bojtor, András and Koltai, Kirstóf and Klujber, Gergely and Szieberth, Máté and Márkus, Bence Gábor and Beke, Dávid and Kamarás, Katalin and Gali, Ádám and Amirari, D and Berry, Robert and Boucher, Salime (2022) Ultrahigh nitrogen-vacancy center concentration in diamond. CARBON, 188. pp. 393-400. ISSN 0008-6223

Li, Song and Thiering, Gergő and Udvarhelyi, Péter and Ivády, Viktor and Gali, Ádám (2022) Carbon defect qubit in two-dimensional WS2. NATURE COMMUNICATIONS, 13 (1). ISSN 2041-1723

Vindolet, Baptiste and Adam, Marie-Pierre and Toraille, Loic and Chipaux, Mayeul and Hilberer, Antoine and Thiering, Gergő and Dupuy, Géraud and Razinkovas, Lukas and Alkauska, Audrius and Thiering, Gergő and Gali, Ádám and De Feudis, Mary and Ngandeu Ngambou, Midrel Wilfried and Achard, Jocelyn and Tallaire, Alexandre and Schmidt, Martin and Becher, Christoph and Roch, Jean-François (2022) Optical properties of SiV and GeV color centers in nanodiamonds under hydrostatic pressures up to 180 GPa. PHYSICAL REVIEW B, 106 (21). No-214109. ISSN 2469-9950

Li, Song and Pershin, Anton and Thiering, Gergő and Udvarhelyi, Péter and Gali, Ádám (2022) Ultraviolet Quantum Emitters in Hexagonal Boron Nitride from Carbon Clusters. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 13 (14). pp. 3150-3157. ISSN 1948-7185

Barcza, Gergely and Ivády, Viktor and Szilvási, T. and Vörös, M. and Veis, L. and Gali, Ádám and Legeza, Örs (2021) DMRG on Top of Plane-Wave Kohn-Sham Orbitals: A Case Study of Defected Boron Nitride. JOURNAL OF CHEMICAL THEORY AND COMPUTATION, 17 (2). pp. 1143-1154. ISSN 1549-9618

Barcza, Gergely and Ivády, Viktor and Szilvási, Tibor and Vörös, Márton and Veis, Libor and Gali, Ádám and Legeza, Örs (2021) DMRG on top of plane-wave Kohn-Sham orbitals: case study of defected boron nitride. JOURNAL OF CHEMICAL THEORY AND COMPUTATION. ISSN 1549-9618

Beke, Dávid and Nardi, Marco V. and Bortel, Gábor and Timpel, Melanie and Czigány, Zsolt and Pasquali, Luca and Chiappini, Andrea and Rudolf, Mátyás and Zalka, Dóra and Rossi, Francesca and Bencs, László and Pekker, Áron and Márkus, Bence G. and Kamarás, Katalin and Simon, Ferenc and Gali, Ádám (2021) Enhancement of X-ray-Excited Red Luminescence of Chromium-Doped Zinc Gallate via Ultrasmall Silicon Carbide Nanocrystals. CHEMISTRY OF MATERIALS, 33 (7). pp. 2457-2465. ISSN 0897-4756 (print); 1520-5002 (online)

Pershin, Anton and Barcza, Gergely and Legeza, Örs and Gali, Ádám (2021) Highly tunable magneto-optical response from magnesium-vacancy color centers in diamond. NPJ QUANTUM INFORMATION. ISSN 2056-6387

Udvarhelyi, Péter and Somogyi, Bálint and Thiering, Gergő and Gali, Ádám (2021) Identification of a Telecom Wavelength Single Photon Emitter in Silicon. PHYSICAL REVIEW LETTERS, 127 (19). No. 196402. ISSN 0031-9007

Thiering, Gergő and Gali, Ádám (2021) Magneto-optical spectra of the split nickel-vacancy defect in diamond. PHYSICAL REVIEW RESEARCH, 3 (4). No. 043052. ISSN 2643-1564

Ivády, Viktor and Barcza, Gergely and Thiering, Gergő and Li, Song and Hamdi, Hanen and Chou, Jyh-Pin and Legeza, Örs and Gali, Ádám (2020) Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride. npj Computational Materials. ISSN 2057-3960

Ivády, Viktor and Barcza, Gergely and Thiering, Gergő and Li, S. and Hamdi, Hanen and Chou, Jyh-Pin and Legeza, Örs and Gali, Ádám (2020) Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride. NPJ COMPUTATIONAL MATERIALS, 6 (1). ISSN 2057-3960

Li, Song and Chou, Jyh-Pin and Hu, Alice and Plenio, Martin B. and Udvarhelyi, Péter and Thiering, Gergő and Gali, Ádám (2020) Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BN. NPJ QUANTUM INFORMATION, 6. pp. 1-7. ISSN 2056-6387

Belinova, Tereza and Machova, Iva and Beke, Dávid and Fučíková, Anna and Gali, Ádám and Humlová, Zuzana and Valenta, Jan and Hubálek Kalbácová, Marie (2020) Immunomodulatory Potential of Differently-Terminated Ultra-Small Silicon Carbide Nanoparticles. NANOMATERIALS, 10 (3). ISSN 2079-4991

Károlyházy, Gyula and Beke, Dávid and Zalka, Dóra and Lenk, Sándor and Krafcsik, Olga and Kamarás, Katalin and Gali, Ádám (2020) Novel method for electroless etching of 6H–SiC. NANOMATERIALS, 10 (3). ISSN 2079-4991

Zhang, Z.H. and Stevenson, P. and Thiering, Gergő and Rose, B.C. and Huang, D. and Gali, Ádám (2020) Optically Detected Magnetic Resonance in Neutral Silicon Vacancy Centers in Diamond via Bound Exciton States. PHYSICAL REVIEW LETTERS, 125 (23). ISSN 0031-9007

Beke, Dávid and Valenta, Jan and Károlyházy, Gyula and Lenk, Sándor and Czigány, Zsolt and Márkus, Bence Gábor and Kamarás, Katalin and Simon, Ferenc and Gali, Ádám (2020) Room-Temperature Defect Qubits in Ultrasmall Nanocrystals. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 11. pp. 1675-1681. ISSN 1948-7185

Hamdi, H. and Thiering, Gergő and Bodrog, Zoltán and Ivády, Viktor and Gali, Ádám (2020) Stone–Wales defects in hexagonal boron nitride as ultraviolet emitters. NPJ COMPUTATIONAL MATERIALS, 6 (1). ISSN 2057-3960

Miao, K.C. and Bourassa, A. and Anderson, C.P. and Whiteley, S.J. and Crook, A.L. and Thiering, Gergő and Udvarhelyi, Péter and Ivády, Viktor and Gali, Ádám (2019) Electrically driven optical interferometry with spins in silicon carbide. SCIENCE ADVANCES, 5 (11). ISSN 2375-2548

Stacey, A. and Dontschuk, N. and Chou, Jyh-Pin and Broadway, D.A. and Schenk, A.K. and Gali, Ádám (2019) Evidence for Primal sp2 Defects at the Diamond Surface: Candidates for Electron Trapping and Noise Sources. ADVANCED MATERIALS INTERFACES, 6 (3). ISSN 2196-7350

Beke, Dávid and Fučíková, Anna and Jánosi, Tibor Z. and Károlyházy, Gyula and Somogyi, Bálint and Lenk, Sándor and Krafcsik, Olga and Czigány, Zsolt and Erostyák, János and Kamarás, Katalin and Valenta, Jan and Gali, Ádám (2018) Direct Observation of Transition from Solid-State to Molecular-Like Optical Properties in Ultrasmall Silicon Carbide Nanoparticles. JOURNAL OF PHYSICAL CHEMISTRY C, 122 (46). pp. 26713-26721. ISSN 1932-7447

Dravecz, Gabriella and Jánosi, Tibor Z. and Beke, Dávid and Major, Dániel Á. and Károlyházy, Gyula and Erostyák, János and Kamarás, Katalin and Gali, Ádám (2018) Identification of the binding site between bovine serum albumin and ultrasmall SiC fluorescent biomarkers. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 20 (19). pp. 13419-13429. ISSN 1463-9076

Thiering, Gergő and Gali, Ádám (2018) Ab Initio Magneto-Optical Spectrum of Group-IV Vacancy Color Centers in Diamond. PHYSICAL REVIEW X, 8 (2). ISSN 2160-3308

Beke, Dávid and Fučíková, Anna and Jánosi, Tibor Z. and Károlyházy, Gyula and Somogyi, Bálint and Lenk, Sándor and Krafcsik, Olga and Czigány, Zsolt and Erostyák, János and Kamarás, Katalin and Valenta, Jan and Gali, Ádám (2018) Direct Observation of Transition from Solid-State to Molecular-Like Optical Properties in Ultrasmall Silicon Carbide Nanoparticles. JOURNAL OF PHYSICAL CHEMISTRY C, 122 (46). pp. 26713-26721. ISSN 1932-7447

Davidsson, J. and Ivády, Viktor and Armiento, R. and Son, N.T. and Gali, Ádám (2018) First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H-SiC. NEW JOURNAL OF PHYSICS, 20 (2). ISSN 1367-2630

Chou, Jyh-Pin and Bodrog, Zoltán and Gali, Ádám (2018) First-Principles Study of Charge Diffusion between Proximate Solid-State Qubits and Its Implications on Sensor Applications. PHYSICAL REVIEW LETTERS, 120 (13). ISSN 0031-9007

Londero, Elisa and Bourgeois, E. and Nesladek, M. and Gali, Ádám (2018) Identification of nickel-vacancy defects by combining experimental and ab initio simulated photocurrent spectra. PHYSICAL REVIEW B, 97 (24). ISSN 2469-9950

Udvarhelyi, Péter and Shkolnikov, V.O. and Gali, Ádám and Burkard, G. and Pályi, András (2018) Spin-strain interaction in nitrogen-vacancy centers in diamond. PHYSICAL REVIEW B, 98 (7). ISSN 2469-9950

Thiering, Gergő and Gali, Ádám (2018) Theory of the optical spin-polarization loop of the nitrogen-vacancy center in diamond. PHYSICAL REVIEW B, 98 (8). ISSN 2469-9950

Londero, Elisa and Thiering, Gergő and Razinkovas, L. and Gali, Ádám and Alkauskas, A. (2018) Vibrational modes of negatively charged silicon-vacancy centers in diamond from ab initio calculations. PHYSICAL REVIEW B, 98 (3). ISSN 2469-9950

Beke, Dávid and Horváth, Klaudia and Kamarás, Katalin and Gali, Ádám (2017) Surface-mediated energy transfer and subsequent photocatalytic behavior in silicon carbide colloid solutions. LANGMUIR, 33. pp. 14263-14268. ISSN 0743-7463

Thiering, Gergő and Gali, Ádám (2017) Ab initio calculation of spin-orbit coupling for an NV center in diamond exhibiting dynamic Jahn-Teller effect. PHYSICAL REVIEW B, 96 (8). ISSN 2469-9950

Udvarhelyi, Péter and Thiering, Gergő and Londero, Elisa and Gali, Ádám (2017) Ab initio theory of the N2V defect in diamond for quantum memory implementation. PHYSICAL REVIEW B, 96 (15). ISSN 2469-9950

Green, B. L. and Breeze, B. G. and Rees, G. J. and Hanna, J. V. and Chou, Jyh-Pin and Ivády, Viktor and Gali, Ádám (2017) All-optical hyperpolarization of electron and nuclear spins in diamond. PHYSICAL REVIEW B, 96 (5). ISSN 2469-9950

Csóré, András and von Bardeleben, H. J. and Cantin, J. L. and Gali, Ádám (2017) Characterization and formation of NV centers in 3C, 4H, and 6H SiC: An ab initio study. PHYSICAL REVIEW B, 96 (8). ISSN 2469-9950

Beke, Dávid and Károlyházy, Gyula and Czigány, Zsolt and Bortel, G. and Kamarás, Katalin and Gali, Ádám (2017) Harnessing no-photon exciton generation chemistry to engineer semiconductor nanostructures. SCIENTIFIC REPORTS, 7 (1). p. 10599. ISSN 2045-2322

Ivády, Viktor and Davidsson, J. and Son, N. T. and Ohshima, T. and Abrikosov, I. A. and Gali, Ádám (2017) Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide. PHYSICAL REVIEW B, 96 (16). ISSN 2469-9950

Christle, D. J. and Klimov, P. V. and Casas, C. F. D.L. and Szász, Krisztián and Ivády, Viktor and Gali, Ádám (2017) Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface. PHYSICAL REVIEW X, 7 (2). ISSN 2160-3308

Häußler, S. and Thiering, Gergő and Dietrich, A. and Waasem, N. and Teraji, T. and Gali, Ádám (2017) Photoluminescence excitation spectroscopy of SiV- and GeV- color center in diamond. NEW JOURNAL OF PHYSICS, 19 (6). ISSN 1367-2630

Pfender, M. and Aslam, N. and Simon, P. and Antonov, D. and Thiering, Gergő and Gali, Ádám (2017) Protecting a Diamond Quantum Memory by Charge State Control. NANO LETTERS, 17 (10). pp. 5931-5937. ISSN 1530-6984

Thiering, Gergő and Gali, Ádám (2016) Characterization of oxygen defects in diamond by means of density functional theory calculations. PHYSICAL REVIEW B, 94 (12). ISSN 2469-9950

Ivády, Viktor and Klimov, P. V. and Miao, K. C. and Falk, A. L. and Christle, D. J. and Szász, Krisztián and Gali, Ádám (2016) High-Fidelity Bidirectional Nuclear Qubit Initialization in SiC. PHYSICAL REVIEW LETTERS, 117 (22). ISSN 0031-9007

Beke, Dávid and Jánosi, Tibor Zoltán and Somogyi, Bálint and Major, Dániel Á. and Szekrényes, Zsolt and Erostyák, János and Kamarás, Katalin and Gali, Ádám (2016) Identification of Luminescence Centers in Molecular-Sized Silicon Carbide Nanocrystals. JOURNAL OF PHYSICAL CHEMISTRY C, 120 (1). pp. 685-691. ISSN 1932-7447

Jarmola, A. and Bodrog, Zoltán and Kehayias, P. and Markham, M. and Hall, J. and Gali, Ádám (2016) Optically detected magnetic resonances of nitrogen-vacancy ensembles in C-13-enriched diamond. PHYSICAL REVIEW B, 94 (9). ISSN 2469-9950

Widmann, M. and Lee, S-Y. and Rendler, T. and Son, N. T. and Fedder, H. and Gali, Ádám (2015) Coherent control of single spins in silicon carbide at room temperature. NATURE MATERIALS, 14 (2). pp. 164-168. ISSN 1476-1122

Beke, Dávid and Szekrényes, Zsolt and Czigány, Zsolt and Kamarás, Katalin and Gali, Ádám (2015) Dominant luminescence is not due to quantum confinement in molecular-sized silicon carbide nanocrystals. NANOSCALE, 2015. pp. 10982-10988. ISSN 2040-3364

Falk, A. L. and Klimov, P. V. and Ivády, Viktor and Szász, Krisztián and Christle, D. J. and Gali, Ádám (2015) Optical Polarization of Nuclear Spins in Silicon Carbide. PHYSICAL REVIEW LETTERS, 114 (24). ISSN 0031-9007

Lohrmann, A. and Iwamoto, N. and Bodrog, Zoltán and Castelletto, S. and Ohshima, T. and Gali, Ádám (2015) Single-photon emitting diode in silicon carbide. NATURE COMMUNICATIONS, 6. ISSN 2041-1723

Ivády, Viktor and Szász, Krisztián and Falk, A. L. and Klimov, P. V. and Christle, D. J. and Gali, Ádám (2015) Theoretical model of dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide. PHYSICAL REVIEW B, 92 (11). ISSN 2469-9950

Szállás, Attila and Szász, Krisztián and Trinh, XT and Son, NT and Janzén, E and Gali, Ádám (2014) Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory. JOURNAL OF APPLIED PHYSICS, 116 (11). ISSN 0021-8979

Falk, A. L. and Klimov, P. V. and Buckley, B. B. and Ivády, Viktor and Abrikosov, I. A. and Calusine, G. and Koehl, W. F. and Gali, Ádám and Awschalom, D. D. (2014) Electrically and mechanically tunable electron spins in silicon carbide color centers. PHYSICAL REVIEW LETTERS, 112 (18). ISSN 0031-9007

Deák, Péter and Aradi, B. and Kaviani, M. and Frauenheim, T. and Gali, Ádám (2014) Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects. PHYSICAL REVIEW B, 89 (7). ISSN 2469-9950

Castelletto, S. and Bodrog, Zoltán and Magyar, A. P. and Gentle, A. and Gali, Ádám and Aharonovich, I. (2014) Quantum-confined single photon emission at room temperature from SiC tetrapods. NANOSCALE, 6 (17). pp. 10027-10032. ISSN 2040-3364

Ivády, Viktor and Armiento, R. and Szász, Krisztián and Janzén, E. and Gali, Ádám and Abrikosov, I. A. (2014) Theoretical unification of hybrid-DFT and DFT+U methods for the treatment of localized orbitals. PHYSICAL REVIEW B, 90 (3). ISSN 2469-9950

Hepp, Ch. and Müller, T. and Waselowski, V. and Becker, J. N. and Pingault, B. and Sternschulte, H. and Steinmüller-Nethl, D. and Gali, Ádám and Maze, J. R. and Atatüre, M. and Becher, Ch. (2014) The electronic Structure of the Silicon Vacancy Color Center in Diamond. PHYSICAL REVIEW LETTERS, 112 (3). ISSN 0031-9007

Beke, Dávid and Szekrényes, Zsolt and Balogh, István and Czigány, Zsolt and Kamarás, Katalin and Gali, Ádám (2013) Preparation of small silicon carbide quantum dots by wet chemical etching. JOURNAL OF MATERIALS RESEARCH, 28 (1). pp. 44-49. ISSN 0884-2914

Coulter, J. E. and Manousakis, E. and Gali, Ádám (2013) Limitations of the hybrid functional approach to electronic structure of transition metal oxides. PHYSICAL REVIEW B, 88 (4). ISSN 2469-9950

Siyushev, P. and Pinto, Hugo and Vörös, Márton András and Gali, Ádám and Jelezko, F. and Wrachtrup, J. (2013) Low Temperature Studies of Charge Dynamics of Nitrogen-Vacancy Defect in Diamond. PHYSICAL REVIEW LETTERS, 110 (16). ISSN 0031-9007

Lee, S. -Y. and Widmann, M. and Rendler, T. and Doherty, M. and Babinec, T. and Yang, S. and Eyer, M. and Siyushev, P. and Haussmann, B. and Loncar, M. and Bodrog, Zoltán and Gali, Ádám and Manson, N. and Fedder, H. and Wrachtrup, J. (2013) Readout and control of a single nuclear spin with a meta-stable electron spin ancilla. NATURE NANOTECHNOLOGY, 8 (7). pp. 487-492. ISSN 1748-3387

Ivády, Viktor and Abrikosov, I. A. and Janzén, E. and Gali, Ádám (2013) Role of screening in the density functional applied to transition-metal defects in semiconductors. PHYSICAL REVIEW B, 87 (20). ISSN 2469-9950

Beke, Dávid and Szekrényes, Zsolt and Pálfi, Denés and Róna, Gergely and Balogh, István and Czigány, Zsolt and Kamarás, Katalin and Buday, László and Vértessy G., Beáta and Gali, Ádám (2013) Silicon carbide quantum dots for bioimaging. JOURNAL OF MATERIALS RESEARCH, 28 (2). pp. 205-209. ISSN 0884-2914

Knaup, J. and Deák, P. and Frauenheim, Th. and Gali, Ádám and Hajnal, Zoltán and Choyke, W. (2005) Defects in SiO2 as the possible origin of near interface traps in the SiC∕SiO2 system: A systematic theoretical study. Physical Review B (Condensed Matter and Materials Physics), 72 (11). No. 115323. ISSN 1098-0121

Knaup, J. M. and Deák, Peter and Gali, Ádám and Hajnal, Zoltán and Frauenheim, Thomas and Choyke, W. J. (2005) The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO2 Defects. Materials Science Forum, 483-85. pp. 569-572. ISSN 0255-5476

Knaup, Jan and Deák, Peter and Frauenheim, Thomas and Gali, Ádám and Hajnal, Zoltán and Choyke, W. (2005) Theoretical study of the mechanism of dry oxidation of 4H-SiC. Physical Review B (Condensed Matter and Materials Physics), 71 (23). No. 235321. ISSN 1098-0121

Deák, P. and Gali, Ádám and Knaup, J. and Hajnal, Zoltán and Frauenheim, Th. and Ordejón, P. and Choyke, J.W. (2003) Defects of the SiC/SiO2 interface: energetics of the elementary steps of the oxidation reaction. Physica B: Condensed Matter, 340-42. pp. 1069-1073. ISSN 0921-4526

Szűcs, Bernadett and Gali, Ádám and Hajnal, Zoltán and Deák, Peter and Van de Walle, Chris (2003) Physics and chemistry of hydrogen in the vacancies of semiconductors. Physical Review B (Condensed Matter and Materials Physics), 68 (8). No. 085202. ISSN 1098-0121

Gali, Ádám and Heringer, D. and Deák, P. and Hajnal, Zoltán and Frauenheim, Th. and Devaty, R. and Choyke, W. (2002) Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study. Physical Review B (Condensed Matter and Materials Physics), 66 (12). No. 125208. ISSN 1098-0121

Rauls, E. and Hajnal, Zoltán and Gali, Ádám and Deák, Peter and Frauenheim, Thomas (2001) Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs. Materials Science Forum, 353-56. pp. 435-438. ISSN 1662-9752

Monograph

Gali, Ádám (2011) Ponthibák vizsgálata széles tiltott sávú anyagokban a standard sűrűségfunkcionál elméleteken túli módszerekkel = Investigation of point defects in wide band gap materials by methods beyond the standard density functional theory. Project Report. OTKA.

Gali, Ádám and Aradi, Bálint (2007) Besugárzással létrehozott ponthiba és ponthibaagglomerátumok, valamint ezek optikai tulajdonságokra gyakorolt hatásának elméleti vizsgálata szilíciumkarbidban = Theoretical investigation of point defects, their agglomerates and their effects on optical properties in irradiated silicon carbide by means of quantum mechanical calculations. Project Report. OTKA.